@Article{CiCP-1-511,
author = {},
title = {Grown-in Defects of InSb Crystals: Models and Computation},
journal = {Communications in Computational Physics},
year = {2006},
volume = {1},
number = {3},
pages = {511--527},
abstract = {<p style="text-align: justify;">In this paper, we present a model for grown-in point defects inside indium
antimonide crystals grown by the Czochralski (CZ) technique. Our model is similar to
the ones used for silicon crystal, which includes the Fickian diffusion and a recombination mechanism. This type of models is used for the first time to analyze grown-in point
defects in indium antimonide crystals. The temperature solution and the advance of the
melt-crystal interface, which determines the time-dependent domain of the model, are
based on a recently derived perturbation model. We propose a finite difference method
which takes into account the moving interface. We study the effect of thermal flux on
the point defect patterns during and at the end of the growth process. Our results show
that the concentration of excessive point defects is positively correlated to the heat flux
in the system.</p>},
issn = {1991-7120},
doi = {https://doi.org/},
url = {http://global-sci.org/intro/article_detail/cicp/7968.html}
}