Commun. Comput. Phys.,
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Volume 4.


Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode

Xin Hu 1, Shaoqiang Tang 2*, Maxime Leroux 3

1 CAPT, College of Engineering, Peking University, Beijing 100871, China; and Applied and Computational Mathematics, California Institute of Technology, Pasadena, CA 91125, USA.
2 CAPT, College of Engineering, Peking University, Beijing 100871, China.
3 Department of Physics, ENS de Lyon, 69364 Lyon cedex 07, France.

Received 7 March 2008; Accepted (in revised version) 25 May 2008
Available online 10 July 2008

Abstract

We investigate the validity of stationary simulations for semiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type models. Careful numerical investigations to a quantum hydrodynamic model reveal that the transient simulations do not always converge to the steady states. In particular, growing oscillations are observed at relatively large applied voltage. A dynamical bifurcation is responsible for the stability interchange of the steady state. Transient and stationary computations are also performed for a unipolar quantum drift-diffusion model.


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PACS: 02.60.Cb, 73.63.-b, 02.30.Jr
Key words: Quantum effects, charge transport, dissipation, transient computation, stationary computation.

*Corresponding author.
Email: lanxin@acm.caltech.edu (X. Hu), maotang@pku.edu.cn (S. Tang), maxime.leroux@ens-lyon.fr (M. Leroux)
 

The Global Science Journal