Commun. Comput. Phys., Notice: Undefined index: year in /var/www/html/issue/abstract/readabs.php on line 20 Notice: Undefined index: ppage in /var/www/html/issue/abstract/readabs.php on line 21 Notice: Undefined index: issue in /var/www/html/issue/abstract/readabs.php on line 23 Volume 4. Molecular Dynamics Simulation of Bombardment of Hydrogen Atoms on Graphite Surface A. Ito 1*, H. Nakamura 21 Department of Physics, Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan. 2 Department of Simulation Science, National Institute for Fusion Science, 322-6 Oroshi-cho, Toki 509-5292, Japan. Received 1 November 2007; Accepted (in revised version) 10 March 2008 Available online 17 April 2008 Abstract The new potential model of interlayer intermolecular interaction was proposed to represent ABAB'' stacking of graphite. The bombardment of hydrogen atoms on the graphite surface was investigated using molecular dynamics simulation. Before the first graphene from the surface side was broken, the hydrogen atoms caused the following processes. In the case of the incident energy of 5~eV, many hydrogen atoms were adsorbed on the front of the first graphite. In the case of the incident energy of 15~eV, almost all hydrogen atoms were reflected by the first graphene. In the case of the incident energy of 30~eV, the hydrogen atoms were adsorbed between the first and second graphenes. The radial distribution function and the animation of the MD simulation demonstrated that the graphenes were peeled off one by one, which is called graphite peeling. One $\mathrm{C}_2\mathrm{H}_2$ was generated in such chemical sputtering. But the other yielded molecules often had chain structures terminated by the hydrogen atoms. The erosion yield increased linearly with time. Notice: Undefined variable: ams in /var/www/html/issue/abstract/readabs.php on line 163 PACS: 52.55.Rk, 52.65.Yy, 52.77.Bn, 81.05.Uw, 83.10.Mj Key words: Plasma surface interaction, chemical sputtering, graphite, graphene, hydrogen atom. *Corresponding author. Email: ito.atsushi@nifs.ac.jp (A. Ito), nakamura.hiroaki@nifs.ac.jp (H. Nakamura)