Feature-Scale Simulations of Particulate Slurry Flows in Chemical Mechanical Polishing by Smoothed Particle Hydrodynamics
Dong Wang 1, Sihong Shao 2*, Changhao Yan 1, Wei Cai 3, Xuan Zeng 1*1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China.
2 LMAM and School of Mathematical Sciences, Peking University, Beijing 100871, China.
3 Department of Mathematics and Statistics, University of North Carolina at Charlotte, Charlotte, NC 28223, USA; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China.
Received 26 December 2013; Accepted (in revised version) 3 June 2014
Available online 2 September 2014
In this paper, the mechanisms of material removal in chemical mechanical polishing (CMP) processes are investigated in detail by the smoothed particle hydrodynamics (SPH) method. The feature-scale behaviours of slurry flow, rough pad, wafer defects, moving solid boundaries, slurry-abrasive interactions, and abrasive collisions are modelled and simulated. Compared with previous work on CMP simulations, our simulations incorporate more realistic physical aspects of the CMP process, especially the effect of abrasive concentration in the slurry flows. The preliminary results on slurry flow in CMP provide microscopic insights on the experimental data of the relation between the removal rate and abrasive concentration and demonstrate that SPH is a suitable method for the research of CMP processes.AMS subject classifications: 76M28, 74F10, 70E18, 35Q30
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Key words: Chemical mechanical polishing, smoothed particle hydrodynamics, particulate flow, rough pad, wafer defects, abrasive concentration.
Email: firstname.lastname@example.org (S. H. Shao), email@example.com (X. Zeng)